The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jul. 14, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Namjin Cho, Hwaseong-si, KR;
Yeontae Kim, Suwon-si, KR;
Keesoo Park, Hwaseong-si, KR;
Eunsok Choi, Uiwang-si, KR;
Kyuhee Han, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of forming a semiconductor device includes: loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber; heating the inside of the chamber; and rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition, wherein the injector includes a first outlet exposed within the chamber to discharge the carrier gas directly into the chamber and a second outlet exposed within the chamber to discharge the reactive gas directly into the chamber, wherein the first outlet is disposed below the second outlet.