The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jan. 27, 2017
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Assignee:
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 29/42368 (2013.01); H01L 29/66659 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/665 (2013.01);
Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer disposed under the gate electrode, the thick gate insulating layer being disclosed closer to the drain region than the thin gate insulating layer, and an extended drain junction region disposed below the gate electrode.