The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Oct. 06, 2017
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Shin Hasegawa, Hadano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 27/146 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 22/32 (2013.01); H01L 24/02 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 27/14618 (2013.01); H01L 27/14623 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/0392 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/214 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/92242 (2013.01); H01L 2224/94 (2013.01);
Abstract

Provided is a semiconductor device including: a first substrate having a first primary surface, a second primary surface, and a side surface; a semiconductor element formed on the first primary surface; a first electrode formed on the first primary surface and connected to the semiconductor element on the first primary surface; a second electrode formed on the second primary surface; a through-electrode formed so as to penetrate the first substrate and connecting the first electrode and the second electrode to each other; a second substrate bonded to the first substrate so as to face the first primary surface; and a third electrode formed on the side surface of the first substrate and connected to the second electrode.


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