The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Jan. 12, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yoo-cheol Shin, Hwaseong-si, KR;

Young-woo Park, Hwasung, KR;

Jae-duk Lee, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 27/11578 (2017.01); H01L 27/11526 (2017.01); H01L 27/11573 (2017.01); H01L 27/11551 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 27/1157 (2013.01); H01L 27/11526 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01);
Abstract

A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.


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