The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

May. 10, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Kotaro Noda, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/24 (2006.01); H01L 21/822 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/1157 (2017.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11548 (2017.01); H01L 27/11551 (2017.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01); H01L 27/11578 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11575 (2013.01); H01L 21/8221 (2013.01); H01L 23/528 (2013.01); H01L 23/5221 (2013.01); H01L 23/5226 (2013.01); H01L 27/0688 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11548 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 27/2481 (2013.01); H01L 2224/32145 (2013.01);
Abstract

A semiconductor memory device according to an embodiment comprises: when three directions intersecting each other are assumed to be first through third directions, and two directions intersecting each other in a plane extending in the first and second directions are assumed to be fourth and fifth directions, a memory cell array including: a conductive layer stacked in the third direction above a semiconductor substrate and having a first region; and a first columnar body penetrating the first region of the conductive layer in the third direction and including a semiconductor film, the first columnar body having a cross-section along the first and second directions in which, at a first position which is a certain position in the third direction, a length in the fourth direction is shorter than a length in the fifth direction.


Find Patent Forward Citations

Loading…