The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Jan. 03, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Daniel Chanemougame, Niskayuna, NY (US);

Emilie Bourjot, Cohoes, NY (US);

Assignee:

GLOBALFOUNDARIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/41741 (2013.01); H01L 29/7827 (2013.01);
Abstract

One illustrative IC product disclosed herein includes a first merged doped source/drain region that includes first and second doped regions and an isolation structure positioned adjacent the first doped region. In this example, the product also includes a contact structure positioned adjacent the isolation structure, wherein the contact structure includes a first portion positioned below an upper surface of the first merged doped source/drain region and a second portion positioned above the upper surface, wherein the first portion physically contacts both the first and second doped regions. The product also includes a layer of insulating material positioned on and in physical contact with a portion of an upper surface of the first portion of the contact structure.


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