The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Feb. 15, 2018
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Olivier Weber, Grenoble, FR;
Emmanuel Richard, Saint Pierre D'allevard, FR;
Philippe Boivin, Venelles, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Commissariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
Abstract
Bipolar transistors and MOS transistors are formed in a common process. A semiconductor layer is arranged on an insulating layer. On a side of the bipolar transistors: an insulating region including the insulating layer is formed; openings are etched through the insulating region to delimit insulating walls; the openings are filled with first epitaxial portions; and the first epitaxial portions and a first region extending under the first epitaxial portions and under the insulating walls are doped. On the side of the bipolar transistors and on a side of the MOS transistors: gate structures are formed; second epitaxial portions are made; and the second epitaxial portions covering the first epitaxial portions are doped.