The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Feb. 08, 2017
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Shing-Yih Shih, New Taipei, TW;

Assignee:

Micro Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/6835 (2013.01); H01L 23/3135 (2013.01); H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/97 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/18162 (2013.01);
Abstract

A semiconductor package including at least one semiconductor device, a first redistribution layer, a first molding compound, a second molding compound, conductive vias and a second redistribution layer. The first redistribution layer is disposed beneath the semiconductor device and electrically connected to the semiconductor device. The first molding compound is disposed over the first redistribution layer and surrounds the semiconductor device. The second molding compound surrounds the first redistribution layer and at least a part of the first molding compound. The conductive vias extend through the second molding compound. The second redistribution layer is disposed on a surface of the second molding compound away from the first redistribution layer. The second redistribution layer is electrically connected to the first redistribution layer through the conductive vias.


Find Patent Forward Citations

Loading…