The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Mar. 14, 2018
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Kazuhiro Yuasa, Toyama, JP;

Noriaki Michita, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 21/322 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/02675 (2013.01); H01L 21/2686 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/67757 (2013.01);
Abstract

There is provide a technique that includes preparing a substrate, in which an insulating film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film, in a process chamber; raising a temperature of the substrate to a first temperature with an electromagnetic wave; crystallizing the process target film for a first process time period while maintaining the first temperature; raising the temperature of the substrate to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the act of crystallizing the process target film; and repairing a crystal defect of the crystallized process target film for a second process time period, which is shorter than the first process time period, while maintaining the second temperature.


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