The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
May. 15, 2017
Applicant:
Veeco Instruments Inc., Plainview, NY (US);
Inventors:
Timothy Pratt, Bayville, NY (US);
Katrina Rook, Jericho, NY (US);
Assignee:
Veeco Instruments Inc., Plainview, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); B82Y 40/00 (2011.01); H01J 37/305 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3053 (2013.01); H01L 21/02008 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/31056 (2013.01); H01L 21/31144 (2013.01); B82Y 40/00 (2013.01); H01J 2237/334 (2013.01);
Abstract
Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.