The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Feb. 01, 2016
Applicant:
Sciocs Company Limited, Hitachi-shi, JP;
Inventor:
Shunsuke Yamamoto, Tokyo, JP;
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); C01B 21/06 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); G01N 23/2252 (2018.01); C30B 25/00 (2006.01); H01S 5/323 (2006.01); H01L 21/306 (2006.01); H01L 21/66 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); C01B 21/0632 (2013.01); C30B 25/00 (2013.01); C30B 29/406 (2013.01); G01N 23/2252 (2013.01); H01L 21/02057 (2013.01); H01L 21/30612 (2013.01); H01L 22/12 (2013.01); H01L 29/2003 (2013.01); H01L 33/0075 (2013.01); H01S 5/0206 (2013.01); H01S 5/32341 (2013.01); H01L 33/32 (2013.01);
Abstract
A method of processing a gallium nitride substrate, includes providing a gallium nitride substrate, polishing a surface of the gallium nitride substrate, and cleaning the polished surface of the gallium nitride substrate. The polished surface includes a GaLα/CKα peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum which is not less than 2, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.