The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Feb. 26, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Mohammed Benwadih, Champigny sur Marne, FR;
Christine Revenant-Brizard, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02628 (2013.01); H01L 21/02422 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02502 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02664 (2013.01); H01L 29/247 (2013.01); H01L 29/78693 (2013.01);
Abstract
The present application relates to a method for forming an active zone of metal oxide for an electronic component including the formation of a stack of IXZO layers produced by liquid phase deposition on a substrate, the layers of said stack having different atomic fractions to each other in order to make it possible to reduce the annealing temperature enabling them to be made functional.