The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Feb. 27, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01J 37/20 (2006.01); H01J 37/24 (2006.01); H01J 37/147 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/243 (2013.01); H01J 37/08 (2013.01); H01J 37/1477 (2013.01); H01J 37/20 (2013.01); H01J 37/3171 (2013.01); H01J 2237/032 (2013.01); H01J 2237/0473 (2013.01); H01J 2237/20207 (2013.01);
Abstract
In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.