The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Jun. 17, 2016
Applicants:

Xiamen Tungsten Co., Ltd., Fujian, CN;

Fujian Changting Golden Dragon Rare-earth Co., Ltd, Fujian Province OT, CN;

Inventors:

Hiroshi Nagata, Fujian, CN;

Rong Yu, Fujian, CN;

Qin Lan, Fujian, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 1/057 (2006.01); H01F 1/053 (2006.01); C22C 38/00 (2006.01); C22C 38/06 (2006.01); C22C 38/10 (2006.01); C22C 38/12 (2006.01); C22C 38/16 (2006.01); H01F 41/02 (2006.01);
U.S. Cl.
CPC ...
H01F 1/0536 (2013.01); C22C 38/002 (2013.01); C22C 38/005 (2013.01); C22C 38/06 (2013.01); C22C 38/10 (2013.01); C22C 38/12 (2013.01); C22C 38/16 (2013.01); H01F 1/057 (2013.01); H01F 1/0577 (2013.01); H01F 41/0293 (2013.01);
Abstract

The present invention discloses a W-containing R—Fe—B—Cu serial sintered magnet and quenching alloy. The sintered magnet contains an RFeB-type main phase, the R being at least one rare earth element comprising Nd or Pr; the crystal grain boundary of the rare earth magnet contains a W-rich area above 0.004 at % and below 0.26 at %, and the W-rich area accounts for 5.0 vol %˜11.0 vol % of the sintered magnet. The sintered magnet uses a minor amount of W pinning crystal to segregate the migration of the pinned grain boundary in the crystal grain boundary to effectively prevent abnormal grain growth and obtain significant improvement. The crystal grain boundary of the quenching alloy contains a W-rich area above 0.004 at % and below 0.26 at %, and the W-rich area accounts for at least 50 vol % of the crystal grain boundary.


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