The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Dec. 05, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jin-Young Park, Uiwang-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of modifying a power mesh includes measuring distances between end cap blocks included in a standard cell in a chip sub-block. The end cap blocks are located at edges of the chip sub-block and edges of the macro cell. The method includes searching a logic circuit block located between the first and second end cap blocks of the end cap blocks. A distance between the first and second end cap blocks is shorter than a predetermined length. It is determined whether a power supply voltage line and a ground voltage line exist at a partial region of the first power mesh layer. When the power supply voltage line or the ground voltage line is determined not to exist at the partial region, the power mesh data are modified to supplement the power supply voltage line or the ground voltage line at the partial region.