The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Sep. 17, 2015
Applicant:

Sumco Corporation, Tokyo, JP;

Inventor:

Syouji Nogami, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); G01N 33/00 (2006.01); H01L 21/67 (2006.01); C23C 16/44 (2006.01); G01N 1/44 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01N 33/0004 (2013.01); C23C 16/4405 (2013.01); H01L 21/67253 (2013.01); G01N 1/44 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 22/12 (2013.01);
Abstract

A contamination control method includes: a wafer loading step for loading a monitor wafer in a chamber of a vapor deposition apparatus; a heat-treatment repetition step for consecutively repeating a heat-treatment step for thermally treating the monitor wafer for predetermined times; a wafer unloading step for unloading the monitor wafer from the chamber; and a wafer-contamination-evaluation step for evaluating a metal-contamination degree of the monitor wafer unloaded out of the chamber. The heat-treatment step includes a first heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-containing gas and a second heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-chloride-containing gas and the hydrogen-containing gas.


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