The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Aug. 21, 2017
Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventors:

Lui Lam, Lexington, MA (US);

Andrew Raymond Chen, Newton, MA (US);

Assignee:

SKYWORKS SOLUTIONS, INC., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/30 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/302 (2013.01); H03F 3/195 (2013.01); H03F 3/21 (2013.01); H03F 3/245 (2013.01); H03F 2200/411 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21127 (2013.01); H03F 2203/45454 (2013.01);
Abstract

Circuits and methods for adjusting one or more operation parameters of a semiconductor device. One example of a circuit includes a first semiconductor device, a beta sensing circuit coupled to the first semiconductor device and configured to measure a current gain of the first semiconductor device and generate a first control signal based on a value of the current gain of the first semiconductor device, and a reference control circuit coupled to the beta sensing circuit and configured to receive the first control signal and adjust an operation parameter of the first semiconductor device based on the value of the current gain of the first semiconductor device.


Find Patent Forward Citations

Loading…