The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Mar. 09, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Naoki Nakamura, Tokyo, JP;
Eiji Nakai, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An optical semiconductor device includes: an n-type semiconductor substrate; an n-type cladding layer provided on the n-type semiconductor substrate; an active layer of a semiconductor laser provided on the n-type cladding layer; a waveguide layer of a waveguide provided on the n-type cladding layer and having a side facing a side of the active layer; a p-type cladding layer provided on the active layer and the waveguide layer; and a middle layer provided between the side of the active layer and the side of the waveguide layer, provided between the n-type cladding layer and the waveguide layer, not provided on the active layer, and having a band gap greater than a band gap of the waveguide layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile