The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Sep. 15, 2017
Applicants:

Uchicago Argonne, Llc, Chicago, IL (US);

Northwestern University, Evanston, IL (US);

Inventors:

Chad Husko, Wauconda, IL (US);

Jeff Guest, Lemont, IL (US);

Mark Hersam, Evanston, IL (US);

Joohoon Kang, Evanston, IL (US);

Joshua Wood, Evanston, IL (US);

Xavier Checoury, Rue Andre Ampere, FR;

Assignees:

UCHICAGO ARGONNE, LLC, Chicago, IL (US);

NORTHWESTERN UNIVERSITY, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/20 (2006.01); H01S 5/042 (2006.01); H01S 5/125 (2006.01); H01S 5/10 (2006.01); H01S 5/04 (2006.01); H01S 5/12 (2006.01); H01S 5/50 (2006.01);
U.S. Cl.
CPC ...
H01S 5/021 (2013.01); H01S 5/041 (2013.01); H01S 5/0425 (2013.01); H01S 5/105 (2013.01); H01S 5/1042 (2013.01); H01S 5/12 (2013.01); H01S 5/125 (2013.01); H01S 5/2054 (2013.01); H01S 5/50 (2013.01);
Abstract

Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.


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