The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Nov. 25, 2014
Applicant:
Georgetown University, Washington, DC (US);
Inventors:
Edward Van Keuren, Herndon, VA (US);
George Burton, Highland, MD (US);
Assignee:
Georgetown University, Washington, DC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/05 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5296 (2013.01); H01L 51/0566 (2013.01); H01L 51/5012 (2013.01); H01L 51/56 (2013.01); H01L 51/002 (2013.01); H01L 51/005 (2013.01); H01L 51/0051 (2013.01); H01L 51/0052 (2013.01); H01L 51/0054 (2013.01); H01L 51/0055 (2013.01); H01L 51/0068 (2013.01);
Abstract
An organic field effect transistor includes a semiconductor substrate having an insulating layer and a source electrode and a drain electrode located on the insulating layer, where the source electrode and drain electrode are spaced apart and define a channel region. The organic field effect transistor also includes an organic semiconductor located in the channel region.