The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Apr. 17, 2017
Applicant:

Eastman Kodak Company, Rochester, NY (US);

Inventors:

Deepak Shukla, Webster, NY (US);

Kevin M. Donovan, Bergen, NY (US);

Assignee:

EASTMAN KODAK COMPANY, Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 17/64 (2006.01); C08F 12/30 (2006.01); C08G 18/08 (2006.01); C08G 77/28 (2006.01); G03F 7/027 (2006.01); H01L 51/05 (2006.01); C08F 128/04 (2006.01); C08G 77/392 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0545 (2013.01); C01B 17/64 (2013.01); C08F 12/30 (2013.01); C08F 128/04 (2013.01); C08G 18/0828 (2013.01); C08G 77/28 (2013.01); C08G 77/392 (2013.01); G03F 7/0275 (2013.01); H01L 51/052 (2013.01); H01L 51/0053 (2013.01); H01L 51/0097 (2013.01); H01L 51/0537 (2013.01); H01L 2251/5338 (2013.01);
Abstract

A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tof at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.


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