The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Nov. 03, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Matthew W. Copel, Yorktown Heights, NY (US);
Damon B. Farmer, White Plains, NY (US);
Talia S. Gershon, White Plains, NY (US);
Paul M. Solomon, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0048 (2013.01); H01L 51/0021 (2013.01); H01L 51/0537 (2013.01); H01L 51/0545 (2013.01); H01L 51/0558 (2013.01); H01L 51/102 (2013.01);
Abstract
A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.