The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Jul. 23, 2015
Applicant:

Basf SE, Ludwigshafen, DE;

Inventors:

Brygida Wojtyniak, Meckenheim, DE;

Viktor Weimann, Meckenheim, DE;

Michael Baecker, Cologne, DE;

Martina Falter, Swisttal-Buschhoven, DE;

Assignee:

BASF SE, Ludwigshafen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/12 (2006.01); H01L 39/14 (2006.01); B05D 1/18 (2006.01); B05D 1/26 (2006.01); H01L 39/24 (2006.01); B05D 7/14 (2006.01); H01B 12/02 (2006.01); H01B 12/06 (2006.01);
U.S. Cl.
CPC ...
H01L 39/24 (2013.01); B05D 1/18 (2013.01); B05D 1/265 (2013.01); B05D 7/14 (2013.01); H01B 12/02 (2013.01); H01L 39/125 (2013.01); H01L 39/143 (2013.01); H01L 39/2451 (2013.01); H01L 39/2461 (2013.01); H01B 12/06 (2013.01);
Abstract

The present invention relates to a precursor () for production of a high-temperature superconductor (HTS) in ribbon form, comprising a metallic substrate () in ribbon form having a first ribbon side () and a second ribbon side (), wherein, on the first ribbon side (), (a) the substrate () has a defined texture as template for crystallographically aligned growth of a buffer layer or an HTS layer and (b) an exposed surface of the substrate () is present or one or more layers () are present that are selected from the group consisting of: buffer precursor layer, pyrolyzed buffer precursor layer, buffer layer, HTS precursor layer, pyrolyzed HTS buffer precursor layer and pyrolyzed and further consolidated HTS buffer precursor layer, and, on the second ribbon side (), at least one ceramic barrier layer () that protects the substrate () against oxidation or a precursor which is converted to such a layer during the HTS crystallization annealing or the pyrolysis is present, wherein, when one or more layers () are present on the first ribbon side (), the ceramic barrier layer () or the precursor thereof has a different chemical composition and/or a different texture than the layer () arranged on the first ribbon side () and directly adjoining the substrate (). In this precursor, the barrier layer () is a layer that delays or prevents ingress of oxygen to the second ribbon side () and is composed of conductive ceramic material or a precursor which is converted to such a precursor during the HTS crystallization annealing or the pyrolysis, and the ceramic material is an electrically conductive metal oxide or an electrically conductive mixture of metal oxides, wherein the conductive metal oxide or one or more metal oxides in the conductive mixture is/are preferably metal oxide(s) doped with an extraneous metal.


Find Patent Forward Citations

Loading…