The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Mar. 28, 2016
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Chang Seok Han, Ansan-si, KR;

Woo Chul Kwak, Ansan-si, KR;

Hyo Shik Choi, Ansan-si, KR;

Jung Hwan Hwang, Ansan-si, KR;

Chang Geun Jang, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.


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