The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Feb. 21, 2006
Applicants:

Harry A. Atwater, Jr., South Pasadena, CA (US);

James M. Zahler, Pasadena, CA (US);

Anna Fontcuberta I Morral, Munich, DE;

Tom Pinnington, Pasadena, CA (US);

Sean Olson, Santa Monica, CA (US);

Inventors:

Harry A. Atwater, Jr., South Pasadena, CA (US);

James M. Zahler, Pasadena, CA (US);

Anna Fontcuberta i Morral, Munich, DE;

Tom Pinnington, Pasadena, CA (US);

Sean Olson, Santa Monica, CA (US);

Assignee:

KONINKLIJKE PHILIPS N.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 31/18 (2006.01); C30B 33/06 (2006.01); H01L 31/0304 (2006.01); H01L 31/0687 (2012.01); H01L 31/0735 (2012.01); H01L 31/043 (2014.01);
U.S. Cl.
CPC ...
H01L 31/1892 (2013.01); C30B 33/06 (2013.01); H01L 31/03046 (2013.01); H01L 31/043 (2014.12); H01L 31/0687 (2013.01); H01L 31/06875 (2013.01); H01L 31/0735 (2013.01); H01L 31/184 (2013.01); H01L 31/1844 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of making a virtual substrate includes providing a donor substrate comprising a single crystal donor layer of a first material over a support substrate, wherein the first material comprises a ternary, quaternary or penternary semiconductor material or a material which is not available in bulk form, bonding the donor substrate to a handle substrate, and separating the donor substrate from the handle substrate such that a single crystal film of the first material remains bonded to the handle substrate.


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