The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Nov. 21, 2017
Jx Crystals Inc., Issaquah, WA (US);
Lewis M. Fraas, Issaquah, WA (US);
JX Crystals Inc., Issaquah, WA (US);
Abstract
Heterojunction GaSb Photocells for operating in wavelengths around 1.6 microns have P type GaSb wafers with backside P+ back metal contacts. Patterned active areas are created on the front side and receive a thin passivation film. A thin N+ transparent SnOor tin conductive oxide is deposited on the passivation film. A front contact grid is deposited. The thin passivating film is either amorphous silicon (a-Si:H) or TiOwith a hydrogen plasma pretreatment. The deposited N+ transparent SnOor tin conductive oxide forms an N+/P Heterojunction cell. Front grid contacts and full back contacts are deposited. An antireflective coating is applied through the grids.