The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Jul. 01, 2016
Applicant:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Inventors:

Xiuling Li, Champaign, IL (US);

Daniel M. Wasserman, West Lake Hills, TX (US);

Xiang Zhao, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 33/06 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01); G02F 1/1335 (2006.01); H01L 31/0232 (2014.01); H01L 31/0352 (2006.01); H01L 31/0725 (2012.01); H01L 31/0735 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 31/02005 (2013.01); H01L 31/02008 (2013.01); H01L 31/035218 (2013.01); H01L 31/0725 (2013.01); H01L 31/0735 (2013.01); H01L 33/06 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); G02F 1/133509 (2013.01); G02F 2202/36 (2013.01); G02F 2203/055 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01); Y02E 10/544 (2013.01);
Abstract

An optoelectronic device includes an etched body comprising a buried metal contact layer on a top surface of a semiconductor structure, which comprises one or more semiconductor layers. The buried metal contact layer includes an arrangement of holes therein. A plurality of nanopillar structures protrude from the top surface of the semiconductor structure and pass through the arrangement of holes. Each nanopillar structure is surrounded at a base thereof by a portion of the buried metal contact layer. When the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength λ.


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