The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Jan. 09, 2018
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Akihisa Shimomura, Kanagawa, JP;
Yuhei Sato, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Yoshitaka Yamamoto, Nara, JP;
Hideomi Suzawa, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Yutaka Okazaki, Kanagawa, JP;
Naoki Okuno, Kanagawa, JP;
Takahisa Ishiyama, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.