The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Dec. 26, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Denso Corporation, Kariya-shi, Aichi, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A trench gate semiconductor switching element is provided. The semiconductor substrate of this element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench; and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region, and in contact with the gate insulation layer on a lower side of the body region. The bottom region includes a low concentration region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench; and a high concentration region in contact with the gate insulation layer in a second range of the bottom surface adjacent to the first range.