The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Dec. 20, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Josef S. Watts, Stillwater, NY (US);

Shesh M. Pandey, Saratoga Springs, NY (US);

Assignee:

GLOBAL FOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02595 (2013.01); H01L 21/32055 (2013.01); H01L 27/0629 (2013.01);
Abstract

A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region and can include a dopant gradient in the doped well to reduce parasitic capacitance of the resistor structure while retaining heat dissipation properties of the substrate. The resistor body is formed in a cavity in a dielectric layer deposited on the substrate, which deposition can be part of a concurrent fabrication, such as part of forming shallow trench isolations, and the cavity can be lined with the resistor dielectric material.


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