The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Mar. 30, 2017
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Abhijit Bandyopadhyay, San Jose, CA (US);
Christopher J. Petti, Mountain View, CA (US);
Natalie Nguyen, Milpitas, CA (US);
Brian Le, San Jose, CA (US);
Assignee:
SanDisk Technologies LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/11 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 21/768 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 21/76895 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/228 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01); H01L 45/148 (2013.01); H01L 45/16 (2013.01);
Abstract
A method is provided that includes forming a bit line above a substrate; forming a word line above the substrate, and forming a non-volatile memory cell between the bit line and the word line. The non-volatile memory cell includes a non-volatile memory material coupled in series with an isolation element. The isolation element includes a first electrode, a second electrode, and a semiconductor layer and a barrier layer disposed between the first electrode and the second electrode.