The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Dec. 07, 2017
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Inventors:
Xiaowen Lv, Shenzhen, CN;
Chihyu Su, Shenzhen, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/77 (2017.01); H01L 21/4757 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); H01L 21/47573 (2013.01); H01L 21/77 (2013.01); H01L 27/12 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1288 (2013.01); H01L 29/42356 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A thin-film transistor (TFT) array substrate includes a TFT arrangement and a storage capacitor. A gate insulation layer has a portion interposed between two electrode plates of the storage capacitor and thinner than a remaining portion of the gate insulation layer and thus, the thickness of insulation between the electrode plates of the storage capacitor is reduced so that the area of the opposite surfaces of the capacitor can be made smaller and an increased aperture ratio can be achieved.