The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
May. 05, 2017
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Kenichi Okazaki, Tochigi, JP;
Masataka Nakada, Tochigi, JP;
Masahiro Katayama, Tochigi, JP;
Abstract
A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.