The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Jun. 20, 2014
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Yuzo Fukuzaki, Kanagawa, JP;
Hiroaki Ammo, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/861 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 23/528 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 23/367 (2013.01); H01L 23/3677 (2013.01); H01L 23/528 (2013.01); H01L 27/0251 (2013.01); H01L 27/1211 (2013.01); H01L 29/785 (2013.01); H01L 29/78651 (2013.01); H01L 29/8611 (2013.01); H01L 27/0207 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes: a substrate; an insulator layer provided on the substrate; a first transistor provided on the insulator layer; a semiconductor layer including a plurality of impurity regions of a first conduction type, the impurity regions forming a part of the first transistor; a heat dissipation layer; a thermal conductive layer linking the semiconductor layer and the heat dissipation layer; and an interruption structure configured to interrupt a flow of a current between the first transistor and the thermal conductive layer.