The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Apr. 24, 2018
SK Hynix Inc., Gyeonggi-do, KR;
Won Joon Choi, Seoul, KR;
Min Sung Ko, Gyeonggi-do, KR;
Kyeong Bae Kim, Chungcheongbuk-do, KR;
Jong Gi Kim, Gyeonggi-do, KR;
Dong Sun Sheen, Gyeonggi-do, KR;
Jung Myoung Shim, Gyeonggi-do, KR;
Young Ho Yang, Chungcheongbuk-do, KR;
Hyeng Woo Eom, Incheon, KR;
Kwang Wook Lee, Gyeonggi-do, KR;
Woo Jae Chung, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.