The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Jun. 29, 2017
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Young Chul Seo, Gwangmyeong-si, KR;
Duk Ju Jeong, Seoul, KR;
Assignee:
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 27/112 (2006.01); G11C 17/12 (2006.01); H01L 23/525 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); G11C 17/123 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 23/5252 (2013.01);
Abstract
An anti-fuse device includes: a well region disposed in a semiconductor substrate; a gate electrode disposed on a gate insulating film on the semiconductor substrate; and a first well bias tap region disposed below the gate insulating film and the gate electrode in the well region, wherein the well bias tap region is doped with dopants of a same conductivity type as the well region.