The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Feb. 12, 2016
Applicant:
Mie Fujitsu Semiconductor Limited, Kuwana-shi, Mie, JP;
Inventors:
Assignee:
MIE FUJITSU SEMICONDUCTOR LIMITED, Kuwana, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823462 (2013.01); H01L 21/823493 (2013.01); H01L 29/0607 (2013.01); H01L 29/105 (2013.01); H01L 29/1083 (2013.01); H01L 29/42364 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device includes first and second transistors connected to the same power supply. Each of the first and second transistors includes, under a channel region of a low concentration provided between a source region and a drain region of a first conductivity type, an impurity region of a second conductivity type having a higher concentration. The thickness of the gate insulating film in one of the first and second transistors is made larger than the thickness of the gate insulating film in the other one.