The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Aug. 15, 2017
Applicant:
Mediatek Inc., Hsin-Chu, TW;
Inventors:
Assignee:
MEDIATEK INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 23/528 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/528 (2013.01); H01L 29/0649 (2013.01); H01L 29/665 (2013.01); H01L 27/0617 (2013.01); H01L 28/20 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate and a passive component. The passive component is formed on the semiconductor substrate and includes a first polysilicon (poly) layer, a salicide blockage (SAB) layer and a first salicide layer. The SAB layer is formed on the first poly layer. The first salicide layer is formed on the SAB layer.