The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Feb. 28, 2017
Texas Instruments Incorporated, Dallas, TX (US);
Akram A. Salman, Plano, TX (US);
Muhammad Yusuf Ali, Allen, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
Disclosed examples include integrated circuits, fabrication methods and ESD protection circuits to selectively conduct current between a protected node and a reference node during an ESD event, including a protection transistor, a first diode and a resistor formed in a first region of a semiconductor structure, and a second diode formed in a second region isolated from the first region by a polysilicon filled deep trench, where the first and second diodes include cathodes formed by deep N wells alongside the deep trench in the respective first and second regions to use integrated deep trench diode rings to set the ESD protection trigger voltage and prevent a parasitic deep N well/P buried layer junction from breakdown at lower than the rated voltage of the host circuitry.