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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10373919 B1

PDFFull Text
Date of Patent:
Aug. 06, 2019

Filed:

Aug. 01, 2017

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventor:

Tatsuhiko Asai, Hino, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil R Prasad

Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 23/373 (2006.01); H01L 23/492 (2006.01); H01L 23/053 (2006.01); H01L 23/24 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 23/49844 (2013.01); H01L 24/37 (2013.01); H01L 24/40 (2013.01); H01L 24/84 (2013.01); H01L 23/053 (2013.01); H01L 23/24 (2013.01); H01L 23/492 (2013.01); H01L 23/49811 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 24/92 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29113 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/37013 (2013.01); H01L 2224/40095 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/40227 (2013.01); H01L 2224/451 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/84447 (2013.01); H01L 2224/84801 (2013.01); H01L 2924/014 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device including a stacked assembly. The stacked assembly includes a metal substrate, a stacked substrate mounted on the metal substrate and having an electrode pattern, a semiconductor element mounted on the stacked substrate, and a lead frame interconnection electrically connecting the semiconductor element and the electrode pattern. The lead frame interconnection includes a first bonding portion in contact with the semiconductor element, a second bonding portion in contact with the electrode pattern, and an interconnect portion connecting the first and second bonding portions. At least one of the first bonding portion and the second bonding portion is wider than the interconnect portion.

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