The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Dec. 07, 2015
Applicant:
Jusung Engineering Co., Ltd., Gwangju-si, Gyeonggi-do, KR;
Inventors:
Seung Chul Shin, Gwangju-si, KR;
Jin Hyuk Yoo, Gwangju-si, KR;
Min Ho Cheon, Daejeon, KR;
Chul-Joo Hwang, Seongnam-si, KR;
Assignee:
JUSUNG ENGINEERING CO., LTD., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/205 (2006.01); H01J 37/32 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/402 (2013.01); C23C 16/4408 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01J 37/3244 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/205 (2013.01);
Abstract
Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.