The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Mar. 20, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G06F 13/40 (2006.01); G06F 13/16 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G06F 13/1673 (2013.01); G06F 13/4068 (2013.01); G11C 11/5642 (2013.01); G11C 13/004 (2013.01); G11C 13/0033 (2013.01); G11C 13/0035 (2013.01); G11C 16/26 (2013.01); G11C 16/3418 (2013.01); G11C 16/3436 (2013.01); G11C 16/3495 (2013.01); G11C 2013/0057 (2013.01);
Abstract
A method of operating a storage device includes: performing a background read operation on a nonvolatile memory by using a default read voltage level; performing a read retry operation on the nonvolatile memory by using a corrected read voltage level when the background read operation fails; storing the corrected read voltage level in a history buffer when the read retry operation succeeds; and performing a host read operation on the nonvolatile memory by using the history buffer in response to a read request received from a host.