The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
May. 24, 2017
SK Hynix Inc., Icheon, KR;
Woo-Tae Lee, Seoul, KR;
Seok-Man Hong, Seoul, KR;
Myoung-Sub Kim, Seongnam, KR;
Tae-Hoon Kim, Seongnam, KR;
Hyun-Jeong Kim, Yongin, KR;
SK HYNIX INC., Icheon, KR;
Abstract
A method for reading data of a memory cell including a resistive memory element having a low resistance state and a high resistance state according to stored data and a selection element may include applying a recovery voltage to both ends of the memory cell, and applying a read voltage to both ends of the memory cell and sensing the data. The recovery voltage may be equal to or more than a second voltage obtained by adding a drift value of the memory cell to a first voltage for turning on the memory cell in a case in which the resistive memory element is in the low resistance state.