The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Dec. 19, 2016
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 11/419 (2006.01); H01L 27/12 (2006.01); G09G 3/36 (2006.01); G09G 5/00 (2006.01); G11C 11/4072 (2006.01); G11C 7/02 (2006.01); G11C 11/405 (2006.01); G11C 11/408 (2006.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G09G 3/36 (2013.01); G09G 5/00 (2013.01); G11C 7/02 (2013.01); G11C 11/405 (2013.01); G11C 11/4072 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); H01L 27/1207 (2013.01); H01L 27/1211 (2013.01); H01L 29/24 (2013.01); H01L 29/7851 (2013.01); H01L 29/7869 (2013.01);
Abstract
Objects are to provide a semiconductor device with a novel structure, to provide a semiconductor device with high resistance to noise, to provide a semiconductor device with a small chip area, and to provide a semiconductor device with low power consumption. In a memory cell included in a frame memory, a transistor containing an oxide semiconductor and a transistor containing silicon are used in combination to retain charge, whereby data is retained. In this structure, turning off the transistor containing an oxide semiconductor can prevent data fluctuations even if power noise through a wiring is generated.