The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Mar. 25, 2016
Applicant:

Peking University Shenzhen Graduate School, Guangdong, CN;

Inventors:

Shengdong Zhang, Guangdong, CN;

Chuanli Leng, Guangdong, CN;

Zhijin Hu, Guangdong, CN;

Congwei Liao, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01); G09G 3/3258 (2016.01); G09G 3/20 (2006.01); G09G 3/36 (2006.01); G11C 19/28 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3258 (2013.01); G09G 3/20 (2013.01); G09G 3/3696 (2013.01); G11C 19/28 (2013.01); G09G 3/3677 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0286 (2013.01);
Abstract

The present application provides a gate driver circuit comprising at least one cascaded gate driver circuit unit. The low-level-holding enabling terminal of the gate driver circuit unit is connected to an adaptive voltage generating module. The adaptive voltage generating module generates a self-compensating voltage according to its constant current source and transmits to the low-level-holding enabling terminal, so as to provide an effective voltage level to the low-level-holding enabling terminal. Because the threshold voltage shift caused by pulling-down transistors in the low-level-holding module is embodied at the low-level-holding enabling terminal, the adaptive voltage generating module generates a self-compensating voltage with its constant current source according to the threshold voltage to compensate the increase of the threshold voltage. As such, the overdrive voltage of the pulling-down the transistors keep constant which provides good pulling-down performance, and consequently the lifetime of the gate driver circuit is prolonged.


Find Patent Forward Citations

Loading…