The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Jun. 30, 2017
Rhode Island Council on Postsecondary Education, Warwick, RI (US);
Otto Gregory, Wakefield, RI (US);
John T. Rhoat, Wakefield, RI (US);
Kevin Rivera, Providence, RI (US);
Rhode Island Council on Postsecondary Education, Warwick, RI (US);
Abstract
Strain gages for use with ceramic matrix composites (CMCs), and methods of manufacture therefore. The strain gages use the CMC as a strain element. For semiconductor CMCs, for example SiC fiber-reinforced SiC CMC, their large gage factor enables high sensitivity, high accuracy strain measurements at high temperatures. By using a single elemental metal such as platinum, or another high temperature conductive material, the strain gages can operate at temperatures over 1600° C. The conductive material is preferably deposited on a dielectric or insulating layer, and contacts the CMC substrate through openings in that layer. The materials can be deposited using thin film vacuum techniques or thick film techniques such as pastes or inks. The strain gages can be configured to measure only the mechanical strain independent of the apparent or thermal strain. The strain gages can be incorporated into a bulk CMC structure during layup, and can optionally measure the strain of only desired fiber weave orientations.