The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Jan. 08, 2014
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Xiangfeng Duan, Los Angeles, CA (US);
Hailong Zhou, Los Angeles, CA (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/02 (2006.01); C01B 32/186 (2017.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C01B 32/186 (2017.08); C30B 29/02 (2013.01); C01B 2204/02 (2013.01); C01B 2204/32 (2013.01);
Abstract
A process of growing graphene includes: (1) providing a metal substrate; (2) annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and (3) introducing a gas mixture to grow graphene over the metal substrate. The gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar.