The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Mar. 31, 2017
Applicant:
Nxp B.v., Eindhoven, NL;
Inventor:
Gijs de Raad, Bemmel, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01); H03K 19/003 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/04 (2013.01); H01L 27/027 (2013.01); H01L 27/0248 (2013.01); H01L 27/0285 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H02H 9/046 (2013.01); H03K 19/00315 (2013.01);
Abstract
Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes an NMOS transistor configured to shunt current in response to an ESD pulse and a bigFET connected in parallel with the NMOS transistor. The NMOS transistor includes a source terminal, a gate terminal, and a body. The gate terminal and the body of the NMOS transistor are connected to the source terminal via a resistor. Other embodiments are also described.