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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10367198 B1

PDFFull Text
Date of Patent:
Jul. 30, 2019

Filed:

Mar. 09, 2012

Negative electrode active material for electric device

Applicants:

Manabu Watanabe, Yokosuka, JP;

Masao Yoshida, Zushi, JP;

Osamu Tanaka, Yokosuka, JP;

Inventors:

Manabu Watanabe, Yokosuka, JP;

Masao Yoshida, Zushi, JP;

Osamu Tanaka, Yokosuka, JP;

Assignee:

NISSAN MOTOR CO., LTD., Yokohama-shi, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Colleen P Dunn

Assistant Examiner:

Anthony M Liang

Int. Cl.
CPC ...
H01M 4/38 (2006.01); H01G 11/06 (2013.01); H01G 11/50 (2013.01); C22C 30/00 (2006.01); C22C 30/04 (2006.01); C22C 13/00 (2006.01); C22C 27/02 (2006.01); C22C 28/00 (2006.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); C22C 13/00 (2013.01); C22C 27/025 (2013.01); C22C 28/00 (2013.01); C22C 30/00 (2013.01); C22C 30/04 (2013.01); H01G 11/06 (2013.01); H01G 11/50 (2013.01); H01M 4/387 (2013.01); H01M 4/0426 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 10/0525 (2013.01); H01M 2220/20 (2013.01); Y02E 60/122 (2013.01); Y02E 60/13 (2013.01); Y02T 10/7022 (2013.01);
Abstract

A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability.

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