The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2019

Filed:

Jan. 06, 2017
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Michael J. Ford, Santa Barbara, CA (US);

Guillermo C. Bazan, Santa Barbara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/28 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0036 (2013.01); H01L 51/0043 (2013.01); H01L 51/0047 (2013.01); H01L 51/0566 (2013.01); H01L 27/283 (2013.01); H01L 51/0003 (2013.01); H01L 51/0533 (2013.01); H01L 51/0541 (2013.01);
Abstract

The present disclosure demonstrates that the introduction of electron deficient fullerene acceptors into thin films comprised of the high-mobility semiconducting polymers suppresses an undesirable 'double-slope' in the current-voltage characteristics, improves operational stability, and changes ambipolar transport to unipolar transport. Examination of a variety of high μ polymers shows general applicability. The present disclosure also shows that instability is further reduced by tuning the relative electron affinity of the polymer and fullerene by creating blends containing different fullerene derivatives and semiconductor polymers. One can obtain hole μ values up to 5.6 cmVsthat are remarkably stable over multiple bias-sweeping cycles. The results provide a simple, solution-processable route to dictate transport properties and improve semiconductor performance in systems that display similar non-idealities.


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